MOSFET的栅极在-1V或更低的反向电压下也很脆弱。在反向电源输入模式中,电源线的电压域TVS VF的电压相同。这种反向偏置模式会引起电子线路的故障。EPI PAR TVS的低正向压降能够很好地解决这个问题。保护电路免受反向电源输入损害的另一个方法是在电源线中放一个极性保护整流器,如图8所示。极性保护整流器应该有足够的正向电流等级,以及正向浪涌和反向电压性能。
参考文献1.ISO/DIS-7637-2.3 2004 Road vehicles – Electrical disturbances from conduction and coupling – Part 2. Electrical transient conduction along supply lines only.2.ES-XW7T-1A278 - AC Component and Subsystem Electromagnetic Compatibility,Worldwide Requirements and Test Procedures, Ford Motor Company3.JASO D 001-94 Japanese Automobile standard4.IEC 61000-4-5 International Standard Electromagnetic Compatibility (EMC) – Part 4-5: Testing and measurement techniques, surge immunity test